AON2705 30v p-channel mosfet with schottky diode general description product summary v ds i d (at v gs =-10v) -3.0a r ds(on) (at v gs =-10v) < 108m w r ds(on) (at v gs = -4.5v) < 165m w typical esd protection hbm class 3a v ka 20v i f 2a v f (at i f =1a) <0.45v the AON2705 uses advanced trench technology to provide excellent r ds(on) and low gate charge. a schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for dc-dc convers ion applications. -30v dfn 2x2 top view bottom view k d a symbol v ds v gs i dm v ka i fm t j , t stg symbol t 10s steady-state t 10s steady-state a v c/w maximum junction-to-ambient a 67 87 c/w maximum junction-to-ambient a r q ja 36 47 c/w maximum junction-to-ambient a 85 maximum junction-to-ambient a c/w 35 65 45 power dissipation a p d typ max -55 to 150 -55 to 150 1.5 1.45 0.95 0.92 schottky reverse voltage continuous forward current a t a =25c t a =70c r q ja gate-source voltage 20 t a =25c va -16 i d -3 -2.4 pulsed drain current b continuous drain current a v units parameter absolute maximum ratings t a =25c unless otherwise noted mosfet schottky drain-source voltage -30 20 2.5 parameter: schottky 1.5 pulsed forward current b 15 t a =70c junction and storage temperature range i f t a =70c c thermal characteristics units parameter: mosfet w t a =25c a nc d k s g k d s g k rev0: aug 2012 www.aosmd.com page 1 of 6
AON2705 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 10 ma v gs(th) gate threshold voltage -1.3 -1.8 -2.3 v i d(on) -16 a 89 108 t j =125c 123 150 132 165 m w g fs 6 s v sd -0.8 -1 v i s -1.25 a c iss 180 pf c oss 44 pf c rss 25 pf r g 18.5 37 w q 4 6 nc drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-3a reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz switching parameters v ds =v gs, i d =-250 m a v ds =0v, v gs = 16v gate-body leakage current forward transconductance r ds(on) i s =-1a,v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current v ds =-5v, i d =-3a v gs =-4.5v, i d =-2.5a diode forward voltage maximum body-diode continuous current input capacitance output capacitance dynamic parameters static drain-source on-resistance m w gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge q g(10v) 4 6 nc q g(4.5v) 2 3.5 nc q gs 0.6 nc q gd 1 nc t d(on) 8 ns t r 5 ns t d(off) 18 ns t f 7 ns t rr 10.5 ns q rr 3.5 nc schottky parameters v f 0.4 0.45 v 0.05 10 0.1 20 c t 34 pf t rr 11 14 ns q rr 0.8 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =-3a, di/dt=100a/ m s turn-on rise time total gate charge turn-off delaytime v gs =-10v, v ds =-15v, r l =5 w , r gen =3 w turn-off fall time v gs =-10v, v ds =-15v, i d =-3a gate source charge gate drain charge total gate charge turn-on delaytime ma v r =5v, t j =125c body diode reverse recovery charge i f =-3a, di/dt=100a/ m s forward voltage drop i f =1a i rm maximum reverse leakage current v r =5v schottky reverse recovery charge i f =1a, di/dt=100a/ m s junction capacitance v r =10v schottky reverse recovery time i f =1a, di/dt=100a/ m s i rm maximum reverse leakage current v r =16v ma v r =16v, t j =125c a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environm ent with t a =25 c. the value in any given application depends on the user's spe cific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r q ja is the sum of the thermal impedance from junction to le ad r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtaine d using <300 ms pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environm ent with t a =25 c. the soa curve provides a single pulse rating. rev0: aug 2012 www.aosmd.com page 2 of 6
AON2705 typical electrical and thermal characteristics 0 2 4 6 8 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics -5.0v v gs =-3.0v -4.0v -4.5v -3.5v -7.0v -10v 0 2 4 6 8 0 1 2 3 4 5 -i d (a) -v gs (volts) figure 2: transfer characteristics 25 c 125 c v ds =-5v 100 140 180 r ds(on) (m w ww w ) v = - 10v v gs =-4.5v 1.2 1.4 1.6 normalized on -resistance v gs = - 4.5v v gs =-10v i d =-3a 20 60 0 2 4 6 8 10 r -i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs = - 10v 0.8 1 0 25 50 75 100 125 150 175 normalized on temperature (c) figure 4: on-resistance vs. junction temperature v gs = - 4.5v i d =-2.5a 0 50 100 150 200 250 300 0 2 4 6 8 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =-3a 25 c 125 c 1e-04 1e-03 1e-02 1e-01 1e+00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics 25 c 125 c rev 0: aug 2012 www.aosmd.com page 3 of 6
AON2705 typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 -v gs (volts) -q g (nc) figure 7: gate-charge characteristics v ds =-15v i d =-3a 0 50 100 150 200 250 300 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 10 100 1000 10000 power (w) t j(max) =150 c t a =25 c 1.0 10.0 -i d (amps) 10 m s 1ms dc r ds(on) limited 100 m s 10ms 0.001 0.01 0.1 1 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note e) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =85 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d 1 10 1e-06 0.0001 0.01 1 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) 0.0 0.1 0.01 0.1 1 10 -v ds (volts) figure 9: maximum forward biased safe operating area (note e) 10s dc t j(max) =150 c t a =25 c rev 0: aug 2012 www.aosmd.com page 4 of 6
AON2705 typical electrical and thermal characteristics 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 i f (amps) v f (v) figure 12: schottky forward characteristics 25 c 125 c 0 40 80 120 160 200 0 5 10 15 20 capacitance (pf) v ka (volts) figure 13: schottky capacitance characteristics 0.33 0.36 0.39 0.42 f (volts) i f =1a i =0.5a 1 10 leakage current (ma) v ka =20v v ka =16v 0.001 0.01 0.1 1 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q qq q ja normalized transient thermal resistance pulse width (s) figure 16: schottky normalized maximum transient th ermal impedance (note e) d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =87 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d 0.24 0.27 0.30 0 25 50 75 100 125 150 v f temperature (c) figure 14: schottky forward drop vs. junction temperature i f =0.5a 0.01 0.1 0 25 50 75 100 125 150 leakage current (ma) temperature (c) figure 15: schottky leakage current vs. junction temperature v ka =16v rev 0: aug 2012 www.aosmd.com page 5 of 6
AON2705 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i rev 0: aug 2012 www.aosmd.com page 6 of 6
|
